M+N bit programming and M+L bit read for M bit memory cells

ABSTRACT

A memory device and programming and/or reading process is described that programs and/or reads the cells in the memory array with higher threshold voltage resolution than required. In programming non-volatile memory cells, this allows a more accurate threshold voltage placement during programming and enables pre-compensation for program disturb, increasing the accuracy of any subsequent read or verify operation on the cell. In reading/sensing memory cells, the increased threshold voltage resolution allows more accurate interpretations of the programmed state of the memory cell and also enables more effective use of probabilistic data encoding techniques such as convolutional code, partial response maximum likelihood (PRML), low-density parity check (LDPC), Turbo, and Trellis modulation encoding and/or decoding, reducing the overall error rate of the memory.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memory, and inparticular, the present disclosure relates to solid state non-volatilememory devices and systems utilizing analog signals to communicate datavalues of two or more bits of information.

BACKGROUND

Electronic devices commonly have some type of bulk storage deviceavailable to them. A common example is a hard disk drive (HDD). HDDs arecapable of large amounts of storage at relatively low cost, with currentconsumer HDDs available with over one terabyte of capacity.

HDDs generally store data on rotating magnetic media or platters. Datais typically stored as a pattern of magnetic flux reversals on theplatters. To write data to a typical HDD, the platter is rotated at highspeed while a write head floating above the platter generates a seriesof magnetic pulses to align magnetic particles on the platter torepresent the data. To read data from a typical HDD, resistance changesare induced in a magnetoresistive read head as it floats above theplatter rotated at high speed. In practice, the resulting data signal isan analog signal whose peaks and valleys are the result of the magneticflux reversals of the data pattern. Digital signal processing techniquescalled partial response maximum likelihood (PRML) are then used tosample the analog data signal to determine the likely data patternresponsible for generating the data signal.

HDDs have certain drawbacks due to their mechanical nature. HDDs aresusceptible to damage or excessive read/write errors due to shock,vibration or strong magnetic fields. In addition, they are relativelylarge users of power in portable electronic devices.

Another example of a bulk storage device is a solid state drive (SSD).Instead of storing data on rotating media, SSDs utilize semiconductormemory devices to store their data, but include an interface and formfactor making them appear to their host system as if they are a typicalHDD. The memory devices of SSDs are typically non-volatile flash memorydevices.

Flash memory devices have developed into a popular source ofnon-volatile memory for a wide range of electronic applications. Flashmemory devices typically use a one-transistor memory cell that allowsfor high memory densities, high reliability, and low power consumption.Changes in threshold voltage of the cells, through programming of chargestorage nodes (e.g., floating gates or trapping layers or other physicalphenomena), determine the data value state of each cell. Common uses forflash memory and other non-volatile memory include personal computers,personal digital assistants (PDAs), digital cameras, digital mediaplayers, digital recorders, games, appliances, vehicles, wirelessdevices, mobile telephones, and removable memory modules, and the usesfor non-volatile memory continue to expand.

Unlike HDDs, the operation of SSDs is generally not subject tovibration, shock or magnetic field concerns due to their solid statenature. Similarly, without moving parts, SSDs have lower powerrequirements than HDDs. However, SSDs currently have much lower storagecapacities compared to HDDs of the same form factor and a significantlyhigher cost per bit.

For the reasons stated above, and for other reasons which will becomeapparent to those skilled in the art upon reading and understanding thepresent specification, there is a need in the art for alternative bulkstorage options.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified block diagram of a memory device according to anembodiment of the disclosure.

FIG. 2 is a schematic of a portion of an example NAND memory array asmight be found in the memory device of FIG. 1.

FIG. 3 is a block schematic of a solid state bulk storage device inaccordance with one embodiment of the present disclosure.

FIG. 4 is a depiction of a wave form showing conceptually a data signalas might be received from the memory device by a read/write channel inaccordance with an embodiment of the disclosure.

FIG. 5 is a block schematic of an electronic system in accordance withan embodiment of the disclosure.

FIGS. 6A-6B detail diagrams detailing threshold voltage logic windowstates of non-volatile memory cells in accordance with embodiments ofthe present invention.

FIG. 7 is a block schematic of an electronic system in accordance withan embodiment of the disclosure utilizing analog data communication.

FIGS. 8 and 9 are block schematics of electronic systems in accordancewith embodiments of the disclosure utilizing digital data communication.

DETAILED DESCRIPTION

In the following detailed description of the present embodiments,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration specific embodiments inwhich the embodiments may be practiced. These embodiments are describedin sufficient detail to enable those skilled in the art to practice theinvention, and it is to be understood that other embodiments may beutilized and that process, electrical or mechanical changes may be madewithout departing from the scope of the present disclosure. Thefollowing detailed description is, therefore, not to be taken in alimiting sense.

Traditional solid-state memory devices pass data in the form of binarysignals. Typically, a ground potential represents a first logic level ofa bit of data, e.g., a ‘0’ data value, while a supply potentialrepresents a second logic level of a bit of data, e.g., a ‘1’ datavalue. A multi-level cell (MLC) may be assigned, for example, fourdifferent threshold voltage (Vt) ranges of 200 mV for each range, witheach range corresponding to a distinct data state, thereby representingfour data values or bit patterns. Typically, a dead space or margin of0.2V to 0.4V is between each range to keep the Vt distributions fromoverlapping. If the Vt of the cell is within the first range, the cellmay be deemed to store a logical 11 state and is typically consideredthe erased state of the cell. If the Vt is within the second range, thecell may be deemed to store a logical 10 state. If the Vt is within thethird range, the cell may be deemed to store a logical 00 state. And ifthe Vt is within the fourth range, the cell may be deemed to store alogical 01 state.

When programming a traditional MLC device as described above, cells aregenerally first erased, as a block, to correspond to the erased state.Following erasure of a block of cells, the least-significant bit (LSB)of each cell is first programmed, if necessary. For example, if the LSBis a 1, then no programming is necessary, but if the LSB is a 0, thenthe Vt of the target memory cell is moved from the Vt rangecorresponding to the 11 logic state to the Vt range corresponding to the10 logic state. Following programming of the LSBs, the most-significantbit (MSB) of each cell is programmed in a similar manner, shifting theVt where necessary. When reading an MLC of a traditional memory device,one or more read operations determine generally into which of the rangesthe Vt of the cell voltage falls. For example, a first read operationmay determine whether the Vt of the target memory cell is indicative ofthe MSB being a 1 or a 0 while a second read operation may determinewhether the Vt of the target memory cell in indicative of the LSB beinga 1 or a 0. In each case, however, a single bit is returned from a readoperation of a target memory cell, regardless of how many bits arestored on each cell. This problem of multiple program and readoperations becomes increasingly troublesome as more bits are stored oneach MLC. Because each such program or read operation is a binaryoperation, i.e., each programs or returns a single bit of informationper cell, storing more bits on each MLC leads to longer operation times.

The memory devices of an illustrative embodiment store data as Vt rangeson the memory cells. In contrast to traditional memory devices, however,program and read operations are capable of utilizing data signals not asdiscrete bits of MLC data values, but as full representations of MLCdata values, such as their complete bit patterns. For example, in atwo-bit MLC device, instead of programming a cell's LSB and subsequentlyprogramming that cell's MSB, a target threshold voltage may beprogrammed representing the bit pattern of those two bits. That is, aseries of program and verify operations would be applied to a memorycell until that memory cell obtained its target threshold voltage ratherthan programming to a first threshold voltage for a first bit, shiftingto a second threshold voltage for a second bit, etc. Similarly, insteadof utilizing multiple read operations to determine each bit stored on acell, the threshold voltage of the cell may be determined and passed asa single signal representing the complete data value or bit pattern ofthe cell. The memory devices of the various embodiments do not merelylook to whether a memory cell has a threshold voltage above or belowsome nominal threshold voltage as is done in traditional memory devices.Instead, a voltage signal is generated that is representative of theactual threshold voltage of that memory cell across the continuum ofpossible threshold voltages. An advantage of this approach becomes moresignificant as the bits per cell count is increased. For example, if thememory cell were to store eight bits of information, a single readoperation would return a single analog data signal representative ofeight bits of information.

FIG. 1 is a simplified block diagram of a memory device 101 according toan embodiment of the disclosure. Memory device 101 includes an array ofmemory cells 104 arranged in rows and columns. Although the variousembodiments will be described primarily with reference to NAND memoryarrays, the various embodiments are not limited to a specificarchitecture of the memory array 104. Some examples of other arrayarchitectures suitable for the present embodiments include NOR arrays,AND arrays, and virtual ground arrays. In general, however, theembodiments described herein are adaptable to any array architecturepermitting generation of a data signal indicative of the thresholdvoltage of each memory cell.

A row decode circuitry 108 and a column decode circuitry 110 areprovided to decode address signals provided to the memory device 101.Address signals are received and decoded to access memory array 104.Memory device 101 also includes input/output (I/O) control circuitry 112to manage input of commands, addresses and data to the memory device 101as well as output of data and status information from the memory device101. An address register 114 is coupled between I/O control circuitry112 and row decode circuitry 108 and column decode circuitry 110 tolatch the address signals prior to decoding. A command register 124 iscoupled between I/O control circuitry 112 and control logic 116 to latchincoming commands. Control logic 116 controls access to the memory array104 in response to the commands and generates status information for theexternal processor 130. The control logic 116 is coupled to row decodecircuitry 108 and column decode circuitry 110 to control the row decodecircuitry 108 and column decode circuitry 110 in response to theaddresses.

Control logic 116 is also coupled to a sample and hold circuitry 118.The sample and hold circuitry 118 latches data, either incoming oroutgoing, in the form of analog voltage levels. For example, the sampleand hold circuitry could contain capacitors or other analog storagedevices for sampling either an incoming voltage signal representing datato be written to a memory cell or an outgoing voltage signal indicativeof the threshold voltage sensed from a memory cell. The sample and holdcircuitry 118 may further provide for amplification and/or buffering ofthe sampled voltage to provide a stronger data signal to an externaldevice.

The handling of analog voltage signals may take an approach similar toan approach well known in the area of CMOS imager technology, wherecharge levels generated at pixels of the imager in response to incidentillumination are stored on capacitors. These charge levels are thenconverted to voltage signals using a differential amplifier with areference capacitor as a second input to the differential amplifier. Theoutput of the differential amplifier is then passed to analog-to-digitalconversion (ADC) devices to obtain a digital value representative of anintensity of the illumination. In the present embodiments, a charge maybe stored on a capacitor in response to subjecting it to a voltage levelindicative of an actual or target threshold voltage of a memory cell forreading or programming, respectively, the memory cell. This charge couldthen be converted to an analog voltage using a differential amplifierhaving a grounded input or other reference signal as a second input. Theoutput of the differential amplifier could then be passed to the I/Ocontrol circuitry 112 for output from the memory device, in the case ofa read operation, or used for comparison during one or more verifyoperations in programming the memory device. It is noted that the I/Ocontrol circuitry 112 could optionally include analog-to-digitalconversion functionality and digital-to-analog conversion (DAC)functionality to convert read data from an analog signal to a digitalbit pattern and to convert write data from a digital bit pattern to ananalog signal such that the memory device 101 could be adapted forcommunication with either an analog or digital data interface.

During a write operation, target memory cells of the memory array 104are programmed until voltages indicative of their Vt levels match thelevels held in the sample and hold circuitry 118. This can beaccomplished, as one example, using differential sensing devices tocompare the held voltage level to a threshold voltage of the targetmemory cell. Much like traditional memory programming, programmingpulses could be applied to a target memory cell to increase itsthreshold voltage until reaching or exceeding the desired value. In aread operation, the Vt levels of the target memory cells are passed tothe sample and hold circuitry 118 for transfer to an external processor(not shown in FIG. 1) either directly as analog signals or as digitizedrepresentations of the analog signals depending upon whether ADC/DACfunctionality is provided external to, or within, the memory device.

Threshold voltages of cells may be determined in a variety of manners.For example, a word line voltage could be sampled at the point when thetarget memory cell becomes activated. Alternatively, a boosted voltagecould be applied to a first source/drain side of a target memory cell,and the threshold voltage could be taken as a difference between itscontrol gate voltage and the voltage at its other source/drain side. Bycoupling the voltage to a capacitor, charge would be shared with thecapacitor to store the sampled voltage. Note that the sampled voltageneed not be equal to the threshold voltage, but merely indicative ofthat voltage. For example, in the case of applying a boosted voltage toa first source/drain side of the memory cell and a known voltage to itscontrol gate, the voltage developed at the second source/drain side ofthe memory cell could be taken as the data signal as the developedvoltage is indicative of the threshold voltage of the memory cell.

Sample and hold circuitry 118 may include caching, i.e., multiplestorage locations for each data value, such that the memory device 101may be reading a next data value while passing a first data value to theexternal processor, or receiving a next data value while writing a firstdata value to the memory array 104. A status register 122 is coupledbetween I/O control circuitry 112 and control logic 116 to latch thestatus information for output to the external processor.

Memory device 101 receives control signals at control logic 116 over acontrol link 132. The control signals may include a chip enable CE#, acommand latch enable CLE, an address latch enable ALE, and a writeenable WE#. Memory device 101 may receive commands (in the form ofcommand signals), addresses (in the form of address signals), and data(in the form of data signals) from an external processor over amultiplexed input/output (I/O) bus 134 and output data to the externalprocessor over I/O bus 134.

In a specific example, commands are received over input/output (I/O)pins [7:0] of I/O bus 134 at I/O control circuitry 112 and are writteninto command register 124. The addresses are received over input/output(I/O) pins [7:0] of bus 134 at I/O control circuitry 112 and are writteninto address register 114. The data may be received over input/output(I/O) pins [7:0] for a device capable of receiving eight parallelsignals, or input/output (I/O) pins [15:0] for a device capable ofreceiving sixteen parallel signals, at I/O control circuitry 112 and aretransferred to sample and hold circuitry 118. Data also may be outputover input/output (I/O) pins [7:0] for a device capable of transmittingeight parallel signals or input/output (I/O) pins [15:0] for a devicecapable of transmitting sixteen parallel signals. It will be appreciatedby those skilled in the art that additional circuitry and signals can beprovided, and that the memory device of FIG. 1 has been simplified tohelp focus on the embodiments of the disclosure. Additionally, while thememory device of FIG. 1 has been described in accordance with popularconventions for receipt and output of the various signals, it is notedthat the various embodiments are not limited by the specific signals andI/O configurations described unless expressly noted herein. For example,command and address signals could be received at inputs separate fromthose receiving the data signals, or data signals could be transmittedserially over a single I/O line of I/O bus 134. Because the data signalsrepresent bit patterns instead of individual bits, serial communicationof an 8-bit data signal could be as efficient as parallel communicationof eight signals representing individual bits.

FIG. 2 is a schematic of a portion of an example NAND memory array 200as might be found in the memory array 104 of FIG. 1. As shown in FIG. 2,the memory array 200 includes word lines 202 ₁ to 202 _(N) andintersecting bit lines 204 ₁ to 204 _(M). For ease of addressing in thedigital environment, the number of word lines 202 and the number of bitlines 204 are generally each some power of two.

Memory array 200 includes NAND strings 206 ₁ to 206 _(M). Each NANDstring includes transistors 208 ₁ to 208 _(N), each located at anintersection of a word line 202 and a bit line 204. The transistors 208,depicted as floating-gate transistors in FIG. 2, represent non-volatilememory cells for storage of data. The floating-gate transistors 208 ofeach NAND string 206 are connected in series source to drain between oneor more source select gates 210, e.g., a field-effect transistor (FET),and one or more drain select gates 212, e.g., an FET. Each source selectgate 210 is located at an intersection of a local bit line 204 and asource select line 214, while each drain select gate 212 is located atan intersection of a local bit line 204 and a drain select line 215.

A source of each source select gate 210 is connected to a common sourceline 216. The drain of each source select gate 210 is connected to thesource of the first floating-gate transistor 208 of the correspondingNAND string 206. For example, the drain of source select gate 210 ₁ isconnected to the source of floating-gate transistor 208 ₁ of thecorresponding NAND string 206 ₁. A control gate of each source selectgate 210 is connected to source select line 214. If multiple sourceselect gates 210 are utilized for a given NAND string 206, they would becoupled in series between the common source line 216 and the firstfloating-gate transistor 208 of that NAND string 206.

The drain of each drain select gate 212 is connected to a local bit line204 for the corresponding NAND string at a drain contact. For example,the drain of drain select gate 212 ₁ is connected to the local bit line204 ₁ for the corresponding NAND string 206 ₁ at a drain contact. Thesource of each drain select gate 212 is connected to the drain of thelast floating-gate transistor 208 of the corresponding NAND string 206.For example, the source of drain select gate 212 ₁ is connected to thedrain of floating-gate transistor 208 _(N) of the corresponding NANDstring 206 ₁. If multiple drain select gates 212 are utilized for agiven NAND string 206, they would be coupled in series between thecorresponding bit line 204 and the last floating-gate transistor 208_(N) of that NAND string 206.

Typical construction of floating-gate transistors 208 includes a source230 and a drain 232, a floating gate 234, and a control gate 236, asshown in FIG. 2. Floating-gate transistors 208 have their control gates236 coupled to a word line 202. A column of the floating-gatetransistors 208 are those NAND strings 206 coupled to a given local bitline 204. A row of the floating-gate transistors 208 are thosetransistors commonly coupled to a given word line 202. Other forms oftransistors 208 may also be utilized with embodiments of the disclosure,such as NROM, magnetic or ferroelectric transistors and othertransistors capable of being programmed to assume one of two or morethreshold voltage ranges.

Memory devices of the various embodiments may be advantageously used inbulk storage devices. For various embodiments, these bulk storagedevices may take on the same form factor and communication bus interfaceof traditional HDDs, thus allowing them to replace such drives in avariety of applications. Some common form factors for HDDs include the3.5″, 2.5″ and PCMCIA (Personal Computer Memory Card InternationalAssociation) form factors commonly used with current personal computersand larger digital media recorders, as well as 1.8″ and 1″ form factorscommonly used in smaller personal appliances, such as mobile telephones,personal digital assistants (PDAs) and digital media players. Somecommon bus interfaces include universal serial bus (USB), AT attachmentinterface (ATA) [also known as integrated drive electronics or IDE],serial ATA (SATA), small computer systems interface (SCSI) and theInstitute of Electrical and Electronics Engineers (IEEE) 1394 standard.While a variety of form factors and communication interfaces werelisted, the embodiments are not limited to a specific form factor orcommunication standard. Furthermore, the embodiments need not conform toa HDD form factor or communication interface. FIG. 3 is a blockschematic of a solid state bulk storage device 300 in accordance withone embodiment of the present disclosure.

The bulk storage device 300 includes a memory device 301 in accordancewith an embodiment of the disclosure, a read/write channel 305 and acontroller 310. The read/write channel 305 provides foranalog-to-digital conversion of data signals received from the memorydevice 301 as well as digital-to-analog conversion of data signalsreceived from the controller 310. The controller 310 provides forcommunication between the bulk storage device 300 and an externalprocessor (not shown in FIG. 3) through bus interface 315. It is notedthat the read/write channel 305 could service one or more additionalmemory devices, as depicted by memory device 301′ in dashed lines.Selection of a single memory device 301 for communication can be handledthrough a multi-bit chip enable signal or other multiplexing scheme.

The memory device 301 is coupled to a read/write channel 305 through ananalog interface 320 and a digital interface 325. The analog interface320 provides for the passage of analog data signals between the memorydevice 301 and the read/write channel 305 while the digital interface325 provides for the passage of control signals, command signals andaddress signals from the read/write channel 305 to the memory device301. The digital interface 325 may further provide for the passage ofstatus signals from the memory device 301 to the read/write channel 305.The analog interface 320 and the digital interface 325 may share signallines as noted with respect to the memory device 101 of FIG. 1. Althoughthe embodiment of FIG. 3 depicts a dual analog/digital interface to thememory device, functionality of the read/write channel 305 couldoptionally be incorporated into the memory device 301 as discussed withrespect to FIG. 1 such that the memory device 301 communicates directlywith the controller 310 using only a digital interface for passage ofcontrol signals, command signals, status signals, address signals anddata signals.

The read/write channel 305 is coupled to the controller 310 through oneor more interfaces, such as a data interface 330 and a control interface335. The data interface 330 provides for the passage of digital datasignals between the read/write channel 305 and the controller 310. Thecontrol interface 335 provides for the passage of control signals,command signals and address signals from the controller 310 to theread/write channel 305. The control interface 335 may further providefor the passage of status signals from the read/write channel 305 to thecontroller 310. Status and command/control signals may also be passeddirectly between the controller 310 and the memory device 301 asdepicted by the dashed line connecting the control interface 335 to thedigital interface 325.

Although depicted as two distinct devices in FIG. 3, the functionalityof the read/write channel 305 and the controller 310 could alternativelybe performed by a single integrated circuit device. And whilemaintaining the memory device 301 as a separate device would providemore flexibility in adapting the embodiments to different form factorsand communication interfaces, because it is also an integrated circuitdevice, the entire bulk storage device 300 could be fabricated as asingle integrated circuit device.

The read/write channel 305 is a signal processor adapted to at leastprovide for conversion of a digital data stream to an analog data streamand vice versa. A digital data stream provides data signals in the formof binary voltage levels, i.e., a first voltage level indicative of abit having a first binary data value, e.g., 0, and a second voltagelevel indicative of a bit having a second binary data value, e.g., 1. Ananalog data stream provides data signals in the form of analog voltageshaving more than two levels, with different voltage levels or rangescorresponding to different bit patterns of two or more bits. Forexample, in a system adapted to store two bits per memory cell, a firstvoltage level or range of voltage levels of an analog data stream couldcorrespond to a bit pattern of 11, a second voltage level or range ofvoltage levels of an analog data stream could correspond to a bitpattern of 10, a third voltage level or range of voltage levels of ananalog data stream could correspond to a bit pattern of 00 and a fourthvoltage level or range of voltage levels of an analog data stream couldcorrespond to a bit pattern of 01. Thus, one analog data signal inaccordance with the various embodiments would be converted to two ormore digital data signals, and vice versa.

In practice, control and command signals are received at the businterface 315 for access of the memory device 301 through the controller310. Addresses and data values may also be received at the bus interface315 depending upon what type of access is desired, e.g., write, read,format, etc. In a shared bus system, the bus interface 315 would becoupled to a bus along with a variety of other devices. To directcommunications to a specific device, an identification value may beplaced on the bus indicating which device on the bus is to act upon asubsequent command. If the identification value matches the value takenon by the bulk storage device 300, the controller 310 would then acceptthe subsequent command at the bus interface 315. If the identificationvalue did not match, the controller 310 would ignore the subsequentcommunication. Similarly, to avoid collisions on the bus, the variousdevices on a shared bus may instruct other devices to cease outboundcommunication while they individually take control of the bus. Protocolsfor bus sharing and collision avoidance are well known and will not bedetailed herein. The controller 310 then passes the command, address anddata signals on to the read/write channel 305 for processing. Note thatthe command, address and data signals passed from the controller 310 tothe read/write channel 305 need not be the same signals received at thebus interface 315. For example, the communication standard for the businterface 315 may differ from the communication standard of theread/write channel 305 or the memory device 301. In this situation, thecontroller 310 may translate the commands and/or addressing scheme priorto accessing the memory device 301. In addition, the controller 310 mayprovide for load leveling within the one or more memory devices 301,such that physical addresses of the memory devices 301 may change overtime for a given logical address. Thus, the controller 310 would map thelogical address from the external device to a physical address of atarget memory device 301.

For write requests, in addition to the command and address signals, thecontroller 310 would pass digital data signals to the read/write channel305. For example, for a 16-bit data word, the controller 310 would pass16 individual signals having a first or second binary logic level. Theread/write channel 305 would then convert the digital data signals to ananalog data signal representative of the bit pattern of the digital datasignals. To continue with the foregoing example, the read/write channel305 would use a digital-to-analog conversion to convert the 16individual digital data signals to a single analog signal having apotential level indicative of the desired 16-bit data pattern. For oneembodiment, the analog data signal representative of the bit pattern ofthe digital data signals is indicative of a desired threshold voltage ofthe target memory cell. However, in programming of a one-transistormemory cells, it is often the case that programming of neighboringmemory cells will increase the threshold voltage of previouslyprogrammed memory cells. Thus, for another embodiment, the read/writechannel 305 can take into account these types of expected changes in thethreshold voltage, and adjust the analog data signal to be indicative ofa threshold voltage lower than the final desired threshold voltage.After conversion of the digital data signals from the controller 310,the read/write channel 305 would then pass the write command and addresssignals to the memory device 301 along with the analog data signals foruse in programming the individual memory cells. Programming can occur ona cell-by-cell basis, but is generally performed for a page of data peroperation. For a typical memory array architecture, a page of dataincludes every other memory cell coupled to a word line.

For read requests, the controller would pass command and address signalsto the read/write channel 305. The read/write channel 305 would pass theread command and address signals to the memory device 301. In response,after performing the read operation, the memory device 301 would returnthe analog data signals indicative of the threshold voltages of thememory cells defined by the address signals and the read command. Thememory device 301 may transfer its analog data signals in parallel orserial fashion.

The analog data signals may also be transferred not as discrete voltagepulses, but as a substantially continuous stream of analog signals. Inthis situation, the read/write channel 305 may employ signal processingsimilar to that used in HDD accessing called PRML or partial response,maximum likelihood. In PRML processing of a traditional HDD, the readhead of the HDD outputs a stream of analog signals representative offlux reversals encountered during a read operation of the HDD platter.Rather than attempting to capture the true peaks and valleys of thisanalog signal generated in response to flux reversals encountered by theread head, the signal is periodically sampled to create a digitalrepresentation of the signal pattern. This digital representation canthen be analyzed to determine the likely pattern of flux reversalsresponsible for generation of the analog signal pattern. This same typeof processing can be utilized with embodiments of the presentdisclosure. By sampling the analog signal from the memory device 301,PRML processing can be employed to determine the likely pattern ofthreshold voltages responsible for generation of the analog signal.

FIG. 4 is a depiction of a wave form showing conceptually a data signal450 as might be received from the memory device 301 by the read/writechannel 305 in accordance with an embodiment of the disclosure. The datasignal 450 could be periodically sampled and a digital representation ofthe data signal 450 can be created from the amplitudes of the sampledvoltage levels. For one embodiment, the sampling could be synchronizedto the data output such that sampling occurs during the steady-stateportions of the data signal 450. Such an embodiment is depicted by thesampling as indicated by the dashed lines at times t1, t2, t3 and t4.However, if synchronized sampling becomes misaligned, values of the datasamples may be significantly different than the steady-state values. Inan alternate embodiment, sampling rates could be increased to allowdetermination of where steady-state values likely occurred, such as byobserving slope changes indicated by the data samples. Such anembodiment is depicted by the sampling as indicated by the dashed linesat times t5, t6, t7 and t8, where a slope between data samples at timest6 and t7 may indicate a steady-state condition. In such an embodiment,a trade-off is made between sampling rate and accuracy of therepresentation. Higher sampling rates lead to more accuraterepresentations, but also increase processing time. Regardless ofwhether sampling is synchronized to the data output or more frequentsampling is used, the digital representation can then be used to predictwhat incoming voltage levels were likely responsible for generating theanalog signal pattern. In turn, the likely data values of the individualmemory cells being read can be predicted from this expected pattern ofincoming voltage levels.

Recognizing that errors will occur in the reading of data values fromthe memory device 301, the read/write channel 305 may include errorcorrection. Error correction is commonly used in memory devices, as wellas HDDs, to recover from expected errors. Typically, a memory devicewill store user data in a first set of locations and error correctioncode (ECC) in a second set of locations. During a read operation, boththe user data and the ECC are read in response to a read request of theuser data. Using known algorithms, the user data returned from the readoperation is compared to the ECC. If the errors are within the limits ofthe ECC, the errors will be corrected.

FIG. 5 is a block schematic of an electronic system in accordance withan embodiment of the disclosure. Example electronic systems may includepersonal computers, PDAs, digital cameras, digital media players,digital recorders, electronic games, appliances, vehicles, wirelessdevices, mobile telephones and the like.

The electronic system includes a host processor 500 that may includecache memory 502 to increase the efficiency of the processor 500. Theprocessor 500 is coupled to a communication bus 504. A variety of otherdevices may be coupled to the communication bus 504 under control of theprocessor 500. For example, the electronic system may include randomaccess memory (RAM) 506; one or more input devices 508 such askeyboards, touch pads, pointing devices, etc.; an audio controller 510;a video controller 512; and one or more bulk storage devices 514. Atleast one bulk storage device 514 includes a digital bus interface 515for communication with the bus 504, one or more memory devices inaccordance with an embodiment of the disclosure having an analoginterface for transfer of data signals representative of data patternsof two or more bits of data, and a signal processor adapted to performdigital-to-analog conversion of digital data signals received from thebus interface 515 and analog-to-digital conversion of analog datasignals received from its memory device(s).

M+N Bit Programming and M+L Bit Read for M Bit Memory Cells

Threshold voltages of non-volatile memory cells in memories, includingthose in multi-level cells and systems such as those described above,are typically assigned in ranges (which are also known as “logicwindows”, windows, Vt distributions, threshold voltage levels, orthreshold states) to indicate stored values. As stated above, typically,a buffer of dead space or margin (also known herein as margin, deadspace, buffer, buffer margin, buffer areas, or buffer zones) is placedbetween each range to keep the Vt distributions of the logic windowsfrom overlapping. These ranges/logic windows are typically referred toin operation of the memory by the data value it represents and/or thenominal threshold voltage level assigned to the range/Vt distribution.For example, as detailed in FIG. 6A, an exemplary two bit-per-cell MLCmemory has four logic windows of 200 mV defined in each cell torepresent the 11, 01, 10 and 00 states with a 200 mV to 400 mV bufferarea between the states. In this exemplary memory, the Vt rangecorresponding to the 10 logic state is assigned to the 0.8V to 1.0Vrange and has a nominal threshold voltage level of 0.9V. The nominalthreshold voltage for a given Vt logic window is typically utilized asthe target voltage level to be gained in programming the memory cell tothat logic state (yet is typically not achieved exactly due to cellvariations and programming over/undershoot). In reading or sensing anon-volatile memory cell (e.g., as part of a read or verify operation),the sensed threshold voltage of the memory cell is matched in to one ofthe threshold voltage ranges defined by the logic windows (and thecorresponding nominal threshold voltage/logic state) to allow the stateof the memory cell to be interpreted as digital data and thenmanipulated or transferred from the memory device.

Many factors limit the effective number of states/logic windows modernnon-volatile memories can reliably store and retrieve, such as thelimited threshold voltage range achievable in non-volatile memorydevices and non-volatile memory cell processes, the likelihood ofprogrammed threshold voltage inaccuracy and programming/read disturb forthe memory cell (generally related to memory cell characteristics,including feature size and process), and the requirement for placing aseparating buffer between logic windows (that may also vary in size dueto memory cell programming inaccuracy, Vt disturb and cellcharacteristics). Because of this only a limited number of thresholdvoltage ranges/logic windows can be physically defined in a given celland still be reliably programmed and read, regardless if the memory andrelated circuits may be able to program and read at a higher voltageresolution. This limited number of logic windows for a given memorydevice, cell, and process technology is typically further restricted bythe practice of storing binary values in each cell, thereby furtherlimiting the number of usable logic windows to the closest power of two(2, 4, 8, 16, 32, or 64 logic windows to represent 1, 2, 4, 5, or 6bits, respectively, in each cell) below the physical window limit.

For example, in FIG. 6A, in a memory cell having a useable thresholdvoltage range of −1.0V to 1.8V, four states are defined (2² states,storing 2 bits in each cell), each having a logic window/range of 200 mVwith a 400 mV buffer between adjacent state ranges. State 11 (erased) isdefined to be from −1V to −0.8V, State 01 from −0.4V to −0.2V, State 00from 0.2V to 0.4V, and State 10 from: 0.8V to 1.0V. However, as thememory cells of the array have a usable threshold voltage range of −1.0Vto 1.8V with a minimum usable logic windows/ranges of 200 mV and aminimum buffer between ranges of 200 mV, up to seven states arepossible, as detailed in FIG. 6B (States 0 to 6—State 0: −1V to −0.8V,State 1: −0.6V to −0.4V, State 2: −0.2V to 0V, State 3: 0.2V to 0.4V,State 4: 0.6V to 0.8V, State 5: 1.0V to 1.2V, and State 6: 1.4V to 1.6V,leaving 200 mV (1.6V to 1.8V) left over as unutilized threshold voltagerange).

Embodiments of the present invention program and/or read at higheraccuracy levels (also referred to herein as increased voltage levelresolutions or window voltage level granularities) using a higher numberof program and/or sense ranges than the defined number of Vtranges/logic windows of the cell used in storing its programmed state(e.g., the data states corresponding to the assigned number of databits). This is to provide additional granularity and correlatedinformation (so called soft bit or bits) during programming or readingof the cells so that a processor or controller, such as a digital signalprocessing (DSP) unit, may use various data codes and dataencoding/decoding techniques such as low-density parity check (LDPC),Turbo, Trellis Code Modulation, PRML, etc to achieve as large a numberof bits reliably stored per cell as possible for a given processtechnology. It is noted that, while the embodiments are described inrelation to NAND architecture non-volatile memory arrays and devicesutilizing digital and analog communication, it will be apparent to thoseskilled in the art that the concepts disclosed herein are applicable toother non-volatile memory array architectures and corresponding memorydevices, including, but not limited to NOR arrays, AND arrays, ORarrays, and virtual ground arrays.

In programming and sensing (also known as reading) a non-volatile memorycell, embodiments of the present invention divide the usable thresholdvoltage range of the non-volatile memory cells into an increased numberof ranges, yielding a programming and/or a read/sense voltage resolution(also known as programming or sensing granularity) for the memory devicethat is higher than required by the defined logic windows of the cell.It is noted that in some embodiments of the present invention thisincreased programming and/or sense voltage resolution may be higher thanthe maximum number of logic windows/threshold voltage ranges the memorycells can reliably store. It is also noted that programming operationresolution can differ from that of read/sense operation resolution. Inone embodiment the programming operation voltage resolution is lowerthan the read operation voltage resolution, allowing for increased readaccuracy and data read back/encoding. In another embodiment of thepresent invention the programming operation voltage resolution is higherthan the read operation voltage resolution, allowing for increasedprogramming accuracy and data disturb compensation, thereby increasingdata storage stability and subsequent read back accuracy.

As stated above, during programming operations various embodiments ofthe present invention program at higher voltage resolutions thanrequired, dividing the usable threshold voltage range of thenon-volatile memory cell being programmed into a larger number ofvoltage ranges (also known as nominal voltage levels or voltage steps)than the defined number of logic window/threshold voltage states. Thisyields a programming voltage step resolution/granularity that is higherthan required to program a selected data state into a defined logicwindow of the cell, allowing more accurate programming. This increasedprogramming accuracy allows the programmed threshold voltage to be moreaccurately placed in the target threshold voltage range, enabling morereliable subsequent read and verify operations. In addition, theincreased programming accuracy also allows for the programmed thresholdvoltage of the cell to be pre-biased against the predicted programdisturb and coupling effects of the adjacent memory cells. Inparticular, where data is being written into multiple rows of the memoryarray and so the final programmed states of the adjacent memory cellsare known. In this case, the threshold voltage programmed in to a givencell can be programmed at the increased programming voltage resolutionto take into account the predicted coupling and disturb effects of theadjacent cells. In this manner, the resulting final programmed thresholdvoltage of the cell, after programming of the array section, will bewithin the intended logic window/state/threshold voltage range of thecell.

The programmed threshold voltage of memory cells in memories, includingthose in multi-level cells and systems as described above, candeteriorate in various ways and for various reasons. Program disturb isone of these many causes for threshold voltage deterioration. Programdisturb happens when the programming of subsequent memory cells affectthe programmed threshold voltage of a previously programmed memory cell.In some cases, particularly in modem memory cells with reduced featuresizes and smaller logic windows/threshold voltage ranges and buffermargins, program disturb can move the programmed threshold voltage ofthe cell to the extent such that it causes an error when read (such aswhen the cell threshold voltage is moved to be within the buffer marginbetween logic windows) or causes the cell to read as being in adifferent state altogether than that originally programmed.

One such method of predicting and compensating for program disturb ofmemory cells in NAND architecture non-volatile memory devices and arraysis detailed in U.S. patent application Ser. No. 12/136,546, titled“METHODS AND APPARATUS UTILIZING PREDICTED COUPLING EFFECT IN THEPROGRAMMING OF NON-VOLATILE MEMORY,” filed Jun. 10, 2008, which iscommonly assigned.

Program disturb is generally caused by capacitive coupling betweenadjacent cells and by large programming voltages applied to the adjacent(and inhibited) non-volatile memory cells that are coupled to commonword lines, source lines, bit lines and substrate connections, as theselected memory cells. Generally speaking, in program disturb eventssubsequently-programmed memory cells will tend to pull up the thresholdvoltage of a prior-programmed neighboring memory cell. For example,non-volatile memory cells are typically erased, or brought to someinitial threshold voltage, prior to programming to their desiredthreshold voltage. This initial threshold voltage is usually a negativevoltage, e.g., −1V. Memory cells are then programmed in sequence totheir desired threshold voltages (e.g., a target threshold voltage).Programming generally involves applying a series of programming pulsesof increasing voltage to increase the charge stored on the floatinggate, with each pulse generally followed by a verify operation todetermine whether the memory cell has reached its desired thresholdvoltage. This usually occurs for a logical page of a word line, such aseven or odd columns of that word line. As individual memory cells reachtheir desired threshold voltage, they are inhibited from furtherprogramming. Upon reaching the desired threshold voltages for all memorycells along a given page of a word line, programming is halted and thememory cells in the next page of the word line, or along a page of thenext adjacent word line are then programmed. This process is repeateduntil memory cells along each word line of a column of memory cells areprogrammed.

As memory cells along a subsequent word line or in the adjacent columnsare programmed, their increasing threshold voltages will increase thethreshold voltage of prior programmed memory cells in prior word line aswell as in adjacent columns due to floating gate to floating gatecoupling effect. This will result in an increase of the thresholdvoltage of these prior-programmed memory cells. While this thresholdvoltage increase is small, it can hinder the ability to store increasingnumbers of bits of data per memory cell. As memory cells are used tostore more and more bits of data per cell, this coupling effect isbecoming more troublesome as there is less room for such Vt drift as theVt ranges associated with each bit pattern become more narrow and themargins between the Vt ranges also generally decrease. Thus, bypredicting the coupling effect of subsequently-programmed memory cells,the coupling effect can be advantageously utilized to tighten thedistribution of threshold voltages for a given bit pattern by reducingunexpected Vt drift, which can facilitate more discernable Vt ranges,and thus a higher number of bits of data per memory cell, and/or widermargins between Vt ranges, and thus increased reliability in reading thecorrect data value of a memory cell.

During program operations in various embodiments of the presentinvention the usable threshold voltage range of the non-volatile memorycells being programmed are divided into a larger number of voltageranges (e.g., an increased resolution) than are required by the definednumber of logic windows/states of the memory cell. This allows theprogrammed threshold voltage to be more accurately placed in the targetthreshold voltage range, enabling more reliable subsequent read andverify operations. For example, in the above detailed cell of FIG. 6B,the non-volatile memory cell has a usable threshold voltage range of −1Vto 1.8V and stores 7 defined states/ranges/logic windows of 200 mV each,with 200 mV margins between the logic windows (State 0: −0.1V to −0.8V,State 1: −0.6V to −0.4V, State 2: −0.2V to 0V, State 3: 0.2V to 0.4V,State 4: 0.6V to 0.8V, State 5: 1.0V to 1.2V, and State 6: 1.4V to1.6V). Program disturb events are predicted to move the programmedthreshold voltage (Vt) of a cell 50 mV. As such, the programmingresolution is selected to program the threshold voltage in 50 mV orsmaller steps to allow for compensation of program disturb. E.g.,allowing for programming the threshold voltage at 0.65V when a 50 mVprogram disturb is predicted in programming subsequent memory cells inorder to place the final programmed threshold voltage of the cell in thecenter of the 0.6V to 0.8V range for State 4 (having a nominal thresholdvoltage of 0.7V).

In one exemplary embodiment of the present invention, the number ofdefined logic windows/states are a binary number (2^(M), where M is thenumber of bits of user data being stored in the memory cell). A numberof programming resolution threshold voltage ranges/states in the memorycell is also selected to be a binary number (utilizing 2^(M+N) thresholdvoltage ranges/states, where N is the number of extra bits utilized forprogramming data). It is noted, however, that the number of extraprogramming states and defined programmed threshold voltage logicwindows do not have to be a binary number or represent a whole number ofbits, as noted below. It is also noted that programming resolution canbe effectively changed on the fly by masking off the resolutionrepresented by the least significant/lower bits of the M+N programmeddata (e.g., M+N−1 bits, M+N−2 bits, etc.). It is further noted thatincreased programming resolution and/or accuracy will generally come atthe cost of a slower programming operation due to the increasingly finerthreshold voltage steps in each programming cycle used to step thethreshold voltage to the desired target.

In read, verify or sense operations, various embodiments of the presentinvention sense the threshold voltages of the selected memory cells athigher resolutions than required by the defined number of logicwindows/threshold voltage ranges, yielding a sensed threshold voltageresolution (in nominal threshold voltage ranges) for the memory devicethat is higher than the defined number of logic windows/thresholdvoltage ranges/states of the cell. It is noted that the sensed thresholdvoltage ranges will typically also cross the buffer areas between thelogic windows. This allows for increased read/sensing accuracy andproximity based error correction in situations where the thresholdvoltage has drifted out of the logic window. This allows the memorydevice to compensate for Vt drift and disturb in “near” or “guess” reads(e.g., allowing for a guess as to the correct programmed logic state ofthe cell that can be confirmed with a quick ECC code check, whereasbefore only a read error would be reported and a computationallyintensive ECC error correction algorithm started to attempt to correctthe error(s)). In addition, in one embodiment the increased read/sensingresolution enables the utilization of data encoding techniques in theprogramming of data that enhance data read back (increasing reliabilityand error compensation) when utilized in conjunction with the increaseddata read resolution of embodiments of the present invention. These dataencoding techniques can include, but are not limited to, convolutionalcodes where additional granularity of information is used to make softdecisions and utilize probabilistic decoding techniques to achieveoptimal decoding thereby reducing the overall error rate of the memoryto reduce the overall error rate of the memory, partial response maximumlikelihood (PRML), low-density parity check (LDPC), Turbo, and Trellismodulation encoding.

During read/sensing operations in various embodiments of the presentinvention, the usable threshold voltage range of the non-volatile memorycells being sensed are divided into a larger number of threshold voltageranges than required by the defined number of logic windows/states ofthe memory cell. This increased sensing resolution allows the sensedthreshold voltage to be accurately read and placed in a definedthreshold voltage range, enabling more reliable read and/or verifyoperation. Utilizing the above example from programming, thenon-volatile memory cell has a usable threshold voltage range of −1V to1.8V and stores 5 defined states/logic windows of 400 mV each, with 200mV margins between the logic windows (State 0: −1V to −0.6V, State 1:−0.4V to 0V, State 2: 0.2V to 0.6V, State 3: 0.8V to 1.2V, State 4: 1.4Vto 1.8V). Disturb events are predicted to move the programmed thresholdvoltage (Vt) of a cell +/−50 mV within the logic window/range. As such,the programming resolution is selected to sense the threshold voltageutilizing a 25 mV or smaller resolution to allow for accurate thresholdvoltage read and possible error compensation/correction due to anythreshold voltage drift.

In one embodiment of the present invention, the number of logicwindows/states being read are a binary number (2^(M), where M is thenumber of bits of user data stored in the memory cell), while the numberof read resolution levels in the memory cell are also selected to be abinary number (utilizing 2^(M+L) digitization levels/voltage ranges,where L is the number of extra bits being utilized in sensing level dataor read data). It is noted, however, as above that the number of extrasensing levels and the defined number of threshold voltage logic windowsalso do not have to be a binary number. It is also noted that increasedread resolution and/or accuracy will generally come at the cost of aslower read/sensing operation due to the finer threshold voltage stepsbeing read and increased signal settling times and that read resolutioncan be changed on the fly by selectively masking off the extra L bits ofsensed threshold voltage data.

In one embodiment of the present invention, read operations utilize ahigher resolution than a corresponding programming operation, enablingan increased amount of data to be available for processing when read.Thus, in binary implementation utilizing 2^(M+N) programmingranges/states and 2^(M+L) read digitization ranges/states, L will begreater than N.

FIG. 7 details a simplified diagram of system 700 having an analog NANDarchitecture non-volatile memory device 702 of an embodiment of thepresent invention coupled to a memory controller 704. In FIG. 7, thedata to be written to the non-volatile memory device 702 is processed byan internal digital signal processor (DSP) 706 of the controller 704,which outputs M bits of digital data 708 in combination with the N bits710 of additional programming resolution for each selected memory cellto be written in the non-volatile memory device 702. This M+N bits 708,710 of program data for each selected memory cell is then converted by aM+N bit digital to analog converter (DAC) 712 and output to thenon-volatile memory device 702 as an analog data signal 714. Internal tothe non-volatile memory device 702, the M+N bit analog data signal 714is used to program a selected cell of the NAND architecture memory array716 by the read/write circuitry 718 in a program operation.

Upon access one or more selected memory cells from the non-volatilememory device array 716 are sensed by the read/write circuitry 718. Thesensed data 726 is then buffered 720 and transferred from thenon-volatile memory device 702 to the coupled memory controller 704 asan analog signal. Within the memory controller 704, the analog datavalue signal is converted from analog to digital values with an analogto digital converter 722 and outputs at the elevated M+L bits of readresolution 724. This M+L bits of sensed threshold voltage readresolution for each cell is then coupled to the DSP 706 for processingand retrieval of the stored M bits of data from each memory cell.

It is noted that the analog signal bus 714 transferring the analog datasignal from the controller 704 to the memory device 702 can havemultiple possible forms, including, but not limited to parallel signalbuses, serial signal buses, bi-directional signal buses, andunidirectional transmit and receive signal buses.

Program and read speed of various embodiments of the present inventioncan also be selected by trading off accuracy/resolution and the benefitsderived thereby (program compensation, read encoding algorithm). Forexample, program speed can be increased by reducing the number ofthreshold voltage windows and/or changing the program operation voltageresolution to a coarser level, thereby reducing the total number ofpossible nominal threshold voltage program ranges (those increasednumber of voltage ranges above those needed to store the defined numberof states/logic windows) and reducing the required accuracy of theprogramming operation (thereby reducing the potential number ofprogramming cycles to fall within the voltage range defined by thetarget nominal voltage level being programmed). This reduces programmingaccuracy and the ability to compensate for program disturb (and thus theaccuracy and reliability of any subsequent read operation), but willhave the effect of speeding up the programming cycle by reducing theaccuracy required. This will also have a follow on effect of reducingthe corresponding read accuracy required.

Likewise, read speed can be increased by reducing the number ofthreshold voltage windows and/or changing the read operation voltageresolution to a coarser level, thereby reducing the total number ofpossible nominal threshold voltage read levels (those increased numberof voltage steps read above those needed to read the data value storedin the defined number of states) and reducing the required accuracy ofthe read operation. This reduction in the extra number of possible readthreshold voltage ranges/states (read threshold voltage resolution), inreducing the accuracy required, reduces the sensing time and the timerequired for the bit line to settle to a final voltage. However, thisalso reduces the ability to compensate for threshold window drift byguessing the correct state and reduces the effectiveness of the abovelisted encoding algorithms, but also reduces the required accuracy ofthe corresponding programming operation.

As detailed above in FIG. 7, various embodiments of the presentinvention include memory devices adapted to process and generate analogdata signals representative of data values of the M+N programmed datavalues to store M bits of data in each cell. This is facilitated bystoring data values as threshold voltage ranges on a non-volatile memorycell. Unlike the bit-by-bit programming operations of traditionalmulti-level cell technology, the various embodiments may programdirectly to a target threshold voltage for the desired bit pattern ordata. Similarly, instead of reading individual bits, the variousembodiments generate a data signal indicative of the threshold voltageof the target memory cell, and thus indicative of the M+L bits read fromeach cell, where M bits of data are stored in each cell.

It is noted that while various embodiments may receive and transmit thedata signals as analog signals representative of bit patterns of two ormore bits, they may also provide conversion internal to the memorydevice to an analog signal or selected threshold voltage range/state topermit receiving and transmitting digital signals representative ofindividual bits. It is also noted that in utilizing analog data signals,because a single analog data signal could represent two, four or morebits of information, data transfer rates may be increased along withmemory density as each program or read operation is concurrentlyprocessing multiple bits per memory cell.

As detailed in FIGS. 8 and 9, other embodiments of the present inventionalso include memory devices adapted to receive and process digital datasignals representative of the M+N programmed data values to store M bitsof information in each cell. These digital data signals can then beutilized internal to the memory device to program threshold voltages inselected memory cells by either conversion to an analog thresholdvoltage representation or through direct selection of memory cell statedefined by a threshold voltage range. In addition, in variousembodiments of the present invention, the memory devices are adapted togenerate and transmit digital data signals representative of the M+Lbits read from each cell, where M bits of data are stored in each cell.

In FIG. 8, a simplified diagram of system 800 having a NAND architecturenon-volatile memory device 802 of an embodiment of the present inventioncoupled to a memory controller 804 utilizing digital communication andinternal analog conversion of the digital data. The data to be writtento the non-volatile memory device 802 is processed by an internaldigital signal processor (DSP) 806 of the controller 804, which outputsM bits of data 808 in combination with the N bits 810 of additionalprogramming resolution for each selected memory cell to be written inthe non-volatile memory device 802. This M+N bits 808, 810 of programdata for each memory cell selected to be programmed is then transferred814 as a digital representation to the memory device 802 and convertedby a M+N bit digital to analog converter (DAC) 812 to an analog datasignal 828 internally to the non-volatile memory device 802. The M+N bitanalog data signal 828 is used to program one or more selected cells ofthe memory array 816 by the read/write circuitry 818 in a programoperation.

Upon access one or more selected memory cells of the non-volatile memorydevice array 816 are sensed by the read/write circuitry 818. The sensedthreshold voltage(s) 826 are then buffered 820, if required, andconverted from analog to digital values with an analog to digitalconverter 822 of the non-volatile memory device 802 at the elevated M+Lbits of read resolution. This M+L bits 824 of sensed threshold voltageread resolution for each cell is then transferred from the non-volatilememory device 802 to the coupled memory controller 804 and coupled tothe DSP 806 for processing and retrieval of the M bits of data stored ineach memory cell.

In FIG. 9, a simplified diagram of system 900 having a non-volatilememory device 902 of an embodiment of the present invention coupled to amemory controller 904 utilizing digital communication. The data to bewritten to the non-volatile memory device 902 is processed by aninternal digital signal processor (DSP) 906 of the controller 904, whichoutputs M bits of data 908 in combination with the N bits 910 ofadditional programming resolution for each selected memory cell to bewritten in the non-volatile memory device 902. This M+N bits 908, 910 ofprogram data for each memory cell selected to be programmed is thentransferred across a bus 914 as a digital representation to the memorydevice 902. Internal to the memory device 902 the M+N bits 908, 910 ofprogram data is programmed by the sense amplifier and read/writecircuitry 918 in a program operation into the selected non-volatilememory cells of the memory array 916 utilizing a threshold logic windowstate and programming threshold voltage level directly selected by theinput M+N bit digital data.

Upon access one or more selected memory cells from the non-volatilememory device array 916 are sensed by the read/write circuitry 918 andthe sensed threshold voltage matched to a digital representation of theelevated read resolution. This sensing and matching of the thresholdvoltage to a digital representation can be accomplished by one of any ofthe above detailed methods, including, but not limited to, traditionalmulti-pass reading, ramped word line voltage reading, or source-followerreading. This digital representation of the sensed threshold voltage isthen buffered in the I/O Buffer 920 and output 926 at the elevated M+Lbits of read resolution from the non-volatile memory device 902. Aftertransfer from the non-volatile memory device 902 to the coupled memorycontroller 904, this M+L bits 924 of sensed threshold voltage readresolution for each cell is coupled to the DSP 906 for processing andretrieval of the M bits of data stored in each memory cell.

It is noted that the digital bus 814, 914 transferring the digital datafrom the controller 804, 904 to the memory device 802, 902 of FIGS. 8and 9 can have multiple possible forms, including, but not limited toparallel data buses, serial data buses, bi-directional data buses, andunidirectional data buses.

As stated above, memory cells typically are divided into a binary numberof Vt ranges/logic windows, even though they can reliably store agreater number of distinct (non-binary) ranges/windows, to allow thecells to store one or more bits representing part of a range of binarynumbers or bit pattern. Various embodiments of the present inventionutilize a non-binary number of defined Vt voltage ranges/logic windows,up to the full number of reliably usable voltage ranges of the cell. Indoing so these embodiments may also utilize the above detailed increasedprogramming resolution and/or increased read/sensing resolution over andabove that required to store the selected number of defined states inprogramming and reading the memory cells of the array.

In storing a non-binary number of defined states in each memory cellvarious embodiments of the present invention allow the storage of whatis in effect a “fractional” number of binary states in each cell using anon-binary number of defined Vt ranges/logic windows of each cell.Previously, when storing one or more bits in a non-volatile memory cell,the binary number or bit pattern the bits represent is mapped into abinary number of states of each cell, even if the memory cell canreliably store more states. For example, storing a 6-bit binary numberor pattern requires 64 possible states. Mapping this into 2-bit per cellMLC cells, 3 cells are required and each cell is programmed into one offour possible states {2^6=(2^2)^3=4^3=64 states}. In storing afractional number of bits, a non-binary number of reliable statesavailable in each non-volatile memory cell are utilized to store dataacross multiple cells, increasing the storage density of the memorydevice (e.g., the extra available number of states in each cell can beutilized to store additional data). In doing so, a selected number ofbits of data are encoded into the available states of a selected numberof associated non-volatile memory cells, also known as the minimum basenumber of cells or a memory cell unit. For example, if the three MLCcells can each reliably store 6 states (Vt ranges/logic windows), as agroup (e.g., an associated unit of cells) they can store 6^3=216possible unique states. 216 states will easily allow 7 bits of binarydata to be mapped into them {7 bits of data means 2^7=128 statesrequired}. It is noted that, as with single memory cell MLC encoding,the mapping of binary digits (e.g., bits) does not have to completelyutilize all available states of the memory cell group. This allows theselected number of bits to be more conveniently mapped/encoded in to theavailable number of cell states in the grouping of associated memorycells. Applicant further notes that any memory cell states unutilizedfor data storage (such as the 216−128=88 states remaining in the threeMLC cells of the above example) can, in one embodiment, be utilized toincrease margins between the utilized valid states, pre-adjust fordisturb effects or data encoding (PRML/Trellis/LDPC/Turbo/etc.) orutilized for the storage of error correction data and/or memory deviceoverhead data.

A tradeoff of this approach is as the data is encoded in the availablestates of the selected base number memory cells, instead of an integernumber of bits being stored in each individual cell, a non-integernumber of bits may be stored in each cell, meaning that multiple cellsmust be read to decode the stored data. In addition, the stored data hasan increased vulnerability to disturb and errors due to closer marginsand less redundancy in data states.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations ofthe disclosure will be apparent to those of ordinary skill in the art.Accordingly, this application is intended to cover any adaptations orvariations of the disclosure.

CONCLUSION

A memory device and programming and/or reading process has beendescribed that programs and/or reads the cells in the memory array withhigher threshold voltage resolution than required. In programmingnon-volatile memory cells, this allows a more accurate threshold voltageplacement during programming and enables pre-compensation for programdisturb from the subsequent programming of adjacent memory cells byallowing the threshold voltage to be programmed in fine steps within theselected state/logic window/threshold voltage range, such that theprogram disturb induced by the programming of the subsequence memorycells places the cell at or near its final selected threshold voltagevalue, increasing the accuracy of any subsequent read or verifyoperation on the cell. In reading/sensing memory cells, the increasedthreshold voltage resolution/granularity allows more accurateinterpretations of the actual programmed state of the memory cell andalso enables more effective use of data encoding and decoding techniquessuch as convolutional codes where additional granularity of informationis used to make soft decisions reducing the overall error rate of thememory. The architecture enables other decoding techniques such as PRML,Trellis Code Modulation and other advanced codes such as LDPC and Turbocodes which utilize probabilistic decoding techniques to achieve optimaldecoding, thereby reducing the overall error rate of the memory.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations ofthe invention will be apparent to those of ordinary skill in the art.Accordingly, this application is intended to cover any adaptations orvariations of the invention. It is manifestly intended that thisinvention be limited only by the following claims and equivalentsthereof.

1. A method of operating a memory, comprising: programming a selectedmemory cell of the memory to correspond to a selected state of a numberof logic window states utilizing a selected programming thresholdvoltage level of a number of programming threshold voltage levels;wherein the number of logic window states is determined by dividing ausable threshold voltage range of the memory cell into a number ofthreshold voltage ranges; and wherein the number of programmingthreshold voltage levels is determined by dividing the usable thresholdvoltage range of the memory cell into the number of programmingthreshold voltage ranges, each having a corresponding nominal thresholdvoltage level, where the number of programming threshold voltage rangesis greater than the number of logic window states of the memory cell. 2.The method of claim 1, wherein programming a selected memory cell tocorrespond to a selected state of the number of logic window statesutilizing a selected programming threshold voltage range furthercomprises programming the selected memory cell with M+N bits of data,where M is user data and equal to the defined number of logic windowstates and N is an additional number of program data bits that selectthe programming threshold voltage range to be programmed.
 3. The methodof claim 1, further comprising selecting the programming thresholdvoltage range to be programmed to compensate the selected state of thenumber of logic window states for a predicted program disturb effect. 4.The method of claim 1, further comprising selecting the programmingthreshold voltage range to be programmed in accordance withprobabilistic encoding and/or decoding techniques.
 5. The method ofclaim 4, wherein selecting the programming threshold voltage range to beprogrammed in accordance with probabilistic encoding and/or decodingtechniques further comprises selecting the programming threshold voltagerange to be programmed in accordance to one of convolutional code,partial response maximum likelihood (PRML), low-density parity check(LDPC), Turbo, and Trellis modulation encoding and/or decoding.
 6. Themethod of claim 1, further comprising: accessing a selected memory cellof the memory and determining a nominal sensing threshold voltage levelstate associated with the threshold voltage of the memory cell; whereina number of nominal sensing threshold voltage levels is determined bydividing the usable threshold voltage range of the selected memory cellinto a number of sensing ranges, each of the sensing ranges having acorresponding nominal sensed threshold voltage level; and wherein thenumber of sensing threshold voltage ranges is greater than the number oflogic window states of the selected memory cell.
 7. The method of claim1, wherein the memory is a NAND architecture non-volatile memory.
 8. Themethod of claim 1, further comprising one of communicating program datain one of an analog data signal and a digital data signal to the memory.9. A method of operating a memory, comprising: accessing one or moreselected memory cells and determining a nominal sensing thresholdvoltage level state associated with a programmed threshold voltage ofeach memory cell; wherein a number of nominal sensing threshold voltagelevels is determined by dividing a usable threshold voltage range ofeach of the one or more selected memory cells into a number of sensingranges, each of the sensing ranges having a corresponding nominal sensedthreshold voltage level; and wherein the number of sensing thresholdvoltage ranges is greater than a number of logic window states of eachof the one or more selected memory cells.
 10. The method of claim 9,wherein dividing the usable threshold voltage range of each of the oneor more selected memory cells into a number of sensing ranges, each ofthe sensing ranges having a corresponding nominal sensed thresholdvoltage level, further comprises dividing the usable threshold voltagerange of each of the one or more selected memory cells into 2^(M+L)sensing ranges, where M is a number of bits of user data and equal tothe number of logic window states, and L is an additional number ofsensing data bits that corresponding to the number of nominal sensingthreshold voltage levels.
 11. The method of claim 9, wherein accessingone or more selected memory cells and determining a nominal sensingthreshold voltage level state associated with the programmed thresholdvoltage of each memory cell further comprises decoding the determinednominal sensing threshold level state with one of convolutional code,partial response maximum likelihood (PRML), low-density parity check(LDPC), Turbo, and Trellis modulation decoding.
 12. The method of claim9, further comprising: programming a selected memory cell of the memoryto correspond to a selected state of the number of logic window statesutilizing a selected programming threshold voltage level of a number ofprogramming threshold voltage levels; wherein the number of programmingthreshold voltage levels is determined by dividing the usable thresholdvoltage range of each of the one or more selected memory cells into anumber of programming threshold voltage ranges, each having acorresponding nominal threshold voltage level, where the number ofprogram threshold voltage ranges is greater than the number of logicwindow states of the memory cell.
 13. The method of claim 12, whereinthe number of programming threshold voltage levels is less than thenumber of nominal sensing threshold voltage levels.
 14. The method ofclaim 9, further comprising one of communicating program data in one ofan analog data signal and a digital data signal to the memory.
 15. Anon-volatile memory, comprising: a non-volatile memory array having aplurality of non-volatile memory cells; and a control circuit; whereinthe non-volatile memory is adapted to program M+N bits of program datain each memory cell of a first number of non-volatile memory cells in aprogramming operation, where M is a number of user data bits stored in adefined number of threshold voltage logic window ranges of the memorycell and N is a number of additional programming ranges; and wherein thenon-volatile memory is adapted to sense M+L bits of read data from eachmemory cell of a second number of non-volatile memory cells in a readoperation, where M is the number of user data bits being read from thedefined number of threshold voltage logic window ranges of the memorycell and L is a number of additional nominal sensing voltage rangesbeing sensed in the read operation.
 16. The non-volatile memory of claim15, wherein the non-volatile memory is further adapted to communicateone of an analog voltage level data signal representing the thresholdvoltage (Vt) read from or to be programmed to a memory cell and adigital data signal representing the threshold voltage (Vt) read from orto be programmed to a memory cell.
 17. The non-volatile memory of claim15, wherein the non-volatile memory is further adapted to select theprogramming range defined by of the N bits of the M+N bits beingprogrammed in each cell of the first number of selected cells tocompensate a threshold voltage logic window range selected by the M bitsof user data for a predicted program disturb effect.
 18. Thenon-volatile memory of claim 15, wherein the non-volatile memory isfurther adapted to decode M+L bits of read data from each memory cell ofa second number of non-volatile memory cells with one of convolutionalcode, partial response maximum likelihood (PRML), low-density paritycheck (LDPC), Turbo, and Trellis modulation decoding.
 19. A method ofoperating a memory, comprising: grouping two or more memory cells intoan associated unit of memory cells; and programming data into a numberof defined threshold voltage logic window states of each of the two ormore memory cells of the associated unit of memory cells; wherein ausable threshold voltage range of one or more memory cells of theassociated unit of memory cells is divided into a non-binary number ofdefined threshold voltage logic window states; and wherein theprogrammed data is stored across the associated unit of memory cells bybeing encoded into a total number of available threshold voltage logicwindow states in the associated unit of memory cells.
 20. The method ofclaim 19, further comprising reading data from the associated unit ofmemory cells by sensing the programmed threshold logic window states ofeach of the two or more memory cells of the associated unit of memorycells and decoding the stored data from the programmed threshold logicwindow states.
 21. The method of claim 19, further comprising: dividingthe threshold voltage range of each memory cell of the plurality ofnon-volatile memory cells into a number of programming threshold voltagelevels, wherein the number of program threshold voltage levels isgreater than the defined number of logic window states in each memorycell of the plurality of non-volatile memory cells; and programming aselected memory cell of the plurality non-volatile memory cells of thearray to correspond to a selected state of the defined number ofthreshold voltage logic window states utilizing a selected programmingthreshold voltage level.
 22. The method of claim 19, further comprising:dividing the threshold voltage range of the plurality of non-volatilememory cells of the non-volatile memory array into a number of sensingthreshold voltage levels, wherein the number of sensing thresholdvoltage levels is greater than the defined number of threshold voltagelogic window states of each memory cell of the plurality of non-volatilememory cells; and accessing a selected memory cell of the plurality ofnon-volatile memory cells and sensing a sensing threshold voltage levelstate associated with the programmed threshold voltage of the memorycell, wherein a resolution granularity of the number of sensingthreshold voltage levels is greater than a resolution granularity of thenumber of programming threshold voltage levels.
 23. The method of claim19, wherein the non-binary number of defined threshold voltage logicwindow states is the maximum number of defined threshold windows thatcan be reliably stored and retrieved from the memory cell.
 24. Themethod of claim 19, wherein the defined threshold voltage logic windowstates that are unused for user data storage in the associated unit ofmemory cells are utilized to store overhead data.
 25. A non-volatilememory, comprising: a non-volatile memory array having a plurality ofnon-volatile memory cells; and a control circuit; wherein thenon-volatile memory is adapted to: associate a plurality of associatedgroups of memory cells, each associated group of memory cells having twoor more non-volatile memory cells, wherein a threshold voltage range ofeach associated group of memory cells is divided into a non-binarynumber of defined threshold voltage logic window states, and programdata into the non-binary number of defined threshold voltage logicwindow states of the two or more memory cells of a selected associatedgroup of memory cells, wherein the programmed data is stored across theassociated group of memory cells by being encoded into a total number ofavailable threshold voltage logic window cell states in the associatedgroup of memory cells.